tic12 6 se ries silicon contro lle d re ctif iers 1 apri l 197 1 - r evi sed sep tem be r 2002 spe cification s ar e subjec t t o ch ang e withou t notice. 12 a conti nuo us o n-state cu rr ent 100 a surg e-c urrent glas s p ass iv ate d wa fer 400 v t o 800 v off-s tate voltage max i gt o f 20 ma abs olu te maximu m rati ng s over op erati ng case temperat ure (unless otherwise no ted) notes: 1. these values apply for conti nu ous dc operation with resist iv e load . ab ove 70 c derate linearly to zero a t 110c. 2. thi s value may be a ppli ed continuousl y un de r single phas e 50 h z half-sine-wav e oper ation wi th r esi sti ve load . a bov e 70 c de rate linearly to zero a t 110c. 3. this value app li es for one 50 h z half-sine- wav e whe n the devi ce i s oper ating at (or below) the r at ed value o f pe ak reve rse volta ge and on -state curr en t. surge ma y be repeated after t h e device has returned to or igi na l ther mal eq uil ibrium. 4. thi s valu e applies fo r a m axi mum aver agi ng tim e o f 2 0 ms. rating symbol value un it repetiti ve pea k o ff -stat e vo ltage tic126d tic126m ti c126s tic126n v drm 400 600 700 800 v repetitive pea k reverse voltage tic126d tic126m ti c126s tic126n v rrm 400 600 700 800 v continuous on-stat e curren t a t (or below) 70 c cas e temperature (se e note 1) i t(rms) 12 a averag e on-state curren t (180 con du ctio n angle) at (or bel ow) 70c case te mperature (se e not e 2) i t(av) 7.5 a surge on-s tate curre nt at (or below) 25c case tem perat ure (s ee n ote 3) i tm 100 a peak positiv e ga te curren t (puls e w idth 300 s) i gm 3 a peak gate po wer dissi pa tion (puls e width 300 s) p gm 5 w averag e gat e po wer dissipation (see not e 4) p g(av) 1 w operatin g cas e tem pe rature range t c -40 t o +110 c storage temperatur e range t stg -40 t o +125 c lea d te mp erature 1.6 m m fr om case for 10 secon ds t l 230 c k a g to-2 20 package (t op vi ew) pi n 2 is in electrical contac t with the m ou nti ng bas e. m dc 1aca 1 2 3 this series is currently availabl e, but not recommended for new designs.
tic126 series silicon controlled rectifiers 2
april 1971 - revised september 2002 specifications are subject to change without notice. note 5: this parameter must be measured using pulse techniques, t p = 300 s, duty cycle 2 %. voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body. electrical characteristics at 25c case temperature (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off-state current v d = rated v drm t c = 110c 2 ma i rrm repetitive peak reverse current v r = rated v rrm i g = 0 t c = 110c 2 ma i gt gate trigger current v aa = 12 v r l = 100 ? t p(g) 20 s 8 20 ma v gt gate trigger voltage v aa = 12 v t p(g) 20 s r l = 100 ? t c = - 40c 2.5 v v aa = 12 v t p(g) 20 s r l = 100 ? 0.8 1.5 v aa = 12 v t p(g) 20 s r l = 100 ? t c = 110c 0.2 i h holding current v aa = 12 v initiating i t = 100 ma t c = - 40c 100 ma v aa = 12 v initiating i t = 100 ma 40 v t on-state voltage i t =12a (see note 5) 1.4 v dv/dt critical rate of rise of off-state voltage v d = rated v d i g = 0 t c = 110c 400 v/s thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 2.4 c/w r ja junction to free air thermal resist ance 62.5 c/w
tic126 series silicon controlled rectifiers 3
april 1971 - revised september 2002 specifications are subject to change without notice. thermal information figure 1. figure 2. figure 3. figure 4. average on-state current t c - case temperature - c 30 40 50 60 70 80 90 100 110 i t(av) - maximum average on-state current - a 0 2 4 6 8 10 12 14 16 ti03ae derating curve = 180o continuous dc conduction angle 0 180 max anode power loss i t - continuous on-state current - a 01 1 10 100 p a - max continuous anode power dissipated - w 01 1 10 100 ti03af t j = 110c on-state current vs surge on-state current consecutive 50 hz half-sine-wave cycles 110100 i tm - peak half-sine-wave current - a 1 10 100 ti03ag cycles of current duration vs t c 70c no prior device conduction gate control guaranteed transient thermal r esistance consecutive 50 hz half-sine-wave cycles 110100 r jc(t) - transient thermal resistance - c/w 0.1 1 10 ti03ah cycles of current duration vs
tic126 series silicon controlled rectifiers 4
april 1971 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 5. figure 6. figure 7. figure 8. gate trigger current t c - case temperature - c -50-25 0 255075100125 i gt - gate trigger current - ma 1 10 tc03aa case temperature vs v aa = 12 v r l = 100 ? t p(g) 20 s g ate tri gg er v o lta g e t c - case temperature - c -50-25 0 255075100125 v gt - gate trigger voltage - v 0 02 04 06 08 1 tc03ab case temperature vs v aa =12 v r l = 100 ? t p(g) 20 s holding current t c - case temperature - c -50-25 0 255075100125 i h - holding current - ma 1 10 100 tc03ad case temperature vs v aa = 12 v initiating i t = 100 ma peak on-state voltage i tm - peak on-state current - a 01 1 10 100 v tm - peak on-state voltage - v 0 05 1 15 2 25 tc03ah vs peak on-state current t c = 25 c t p = 300 s duty cycle 2 %
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